Technical Details

• Series:-
• Package:Bag
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):100 V
• Current - Continuous Drain (Id) @ 25°C:20A
• Drive Voltage (Max Rds On, Min Rds On):5V
• Rds On (Max) @ Id, Vgs:120mOhm @ 10A, 5V
• Vgs(th) (Max) @ Id:2.5V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:30 nC @ 5 V
• Vgs (Max):±15V
• Input Capacitance (Ciss) (Max) @ Vds:1500 pF @ 25 V
• FET Feature:Logic Level Gate, 4V Drive
• Power Dissipation (Max):105W (Tc)
• Operating Temperature:175°C (TJ)
• Mounting Type:Through Hole
• Supplier Device Package:TO-220
• Package / Case:TO-220-3