Technical Details

• Series:-
• Package:Bag
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):900 V
• Current - Continuous Drain (Id) @ 25°C:14A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:850mOhm @ 7A, 10V
• Vgs(th) (Max) @ Id:4V @ 1mA

• Gate Charge (Qg) (Max) @ Vgs:-
• Vgs (Max):±30V
• Input Capacitance (Ciss) (Max) @ Vds:2.9 pF @ 25 V
• FET Feature:-
• Power Dissipation (Max):275W (Tc)
• Operating Temperature:-55°C ~ 150°C
• Mounting Type:Through Hole
• Supplier Device Package:TO-3P
• Package / Case:TO-3P-3, SC-65-3