Technical Details

• Series:-
• Package:Bag
• Part Status:Active
• FET Type:P-Channel
• Voltage - Breakdown (V(BR)GSS):30 V
• Drain to Source Voltage (Vdss):-
• Current - Drain (Idss) @ Vds (Vgs=0):20 mA @ 15 V
• Current Drain (Id) - Max:-

• Voltage - Cutoff (VGS off) @ Id:5 V @ 10 nA
• Input Capacitance (Ciss) (Max) @ Vds:5.5pF @ 10V
• Resistance - RDS(On):85 Ohms
• Power - Max:350 mW
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Through Hole
• Package / Case:TO-226-3, TO-92-3 (TO-226AA)
• Supplier Device Package:TO-92