Technical Details

• Series:-
• Package:Bulk
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):59 V
• Current - Continuous Drain (Id) @ 25°C:2.6A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):-
• Rds On (Max) @ Id, Vgs:125mOhm @ 2.6A, 10V
• Vgs(th) (Max) @ Id:2.5V @ 100µA

• Gate Charge (Qg) (Max) @ Vgs:-
• Vgs (Max):±15V
• Input Capacitance (Ciss) (Max) @ Vds:250 pF @ 35 V
• FET Feature:-
• Power Dissipation (Max):1.69W (Ta)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:SOT-223 (TO-261)
• Package / Case:TO-261-4, TO-261AA