Technical Details

• Series:-
• Package:Tube
• Part Status:Active
• FET Type:6 N-Channel (3-Phase Bridge)
• FET Feature:Silicon Carbide (SiC)
• Drain to Source Voltage (Vdss):1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C:171A (Tc)
• Rds On (Max) @ Id, Vgs:16mOhm @ 80A, 20V

• Vgs(th) (Max) @ Id:2.8V @ 2mA
• Gate Charge (Qg) (Max) @ Vgs:464nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds:6040pF @ 1000V
• Power - Max:728W (Tc)
• Operating Temperature:-40°C ~ 175°C (TJ)
• Mounting Type:Chassis Mount
• Package / Case:Module
• Supplier Device Package:SP6-P