Technical Details

• Series:-
• Package:Box
• Part Status:Active
• FET Type:2 N Channel (Phase Leg)
• FET Feature:Silicon Carbide (SiC)
• Drain to Source Voltage (Vdss):1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C:495A (Tc)
• Rds On (Max) @ Id, Vgs:5.2mOhm @ 240A, 20V

• Vgs(th) (Max) @ Id:2.8V @ 6mA
• Gate Charge (Qg) (Max) @ Vgs:1392nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds:18.1pF @ 1000V
• Power - Max:2.031kW (Tc)
• Operating Temperature:-40°C ~ 175°C (TJ)
• Mounting Type:Chassis Mount
• Package / Case:Module
• Supplier Device Package:D3