Technical Details

• Series:-
• Package:Bulk
• Part Status:Active
• FET Type:P-Channel
• Voltage - Breakdown (V(BR)GSS):30 V
• Drain to Source Voltage (Vdss):-
• Current - Drain (Idss) @ Vds (Vgs=0):1.5 mA @ 15 V
• Current Drain (Id) - Max:-

• Voltage - Cutoff (VGS off) @ Id:800 mV @ 10 nA
• Input Capacitance (Ciss) (Max) @ Vds:11pF @ 10V (VGS)
• Resistance - RDS(On):300 Ohms
• Power - Max:225 mW
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:TO-236-3, SC-59, SOT-23-3
• Supplier Device Package:SOT-23-3 (TO-236)