Technical Details

• Series:-
• Package:Bulk
• Part Status:Obsolete
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):5.5 V
• Current - Continuous Drain (Id) @ 25°C:12A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):3.5V, 4.5V
• Rds On (Max) @ Id, Vgs:2.4mOhm @ 12A, 4.5V
• Vgs(th) (Max) @ Id:800mV @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:6 nC @ 3.5 V
• Vgs (Max):±5.5V
• Input Capacitance (Ciss) (Max) @ Vds:940 pF @ 5.5 V
• FET Feature:-
• Power Dissipation (Max):2.5W (Ta)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:6-WLCSP (1.47x1.47)
• Package / Case:6-SMD, No Lead