Technical Details

• Series:BIMOSFET™
• Package:Tube
• Part Status:Not For New Designs
• IGBT Type:-
• Voltage - Collector Emitter Breakdown (Max):3000 V
• Current - Collector (Ic) (Max):30 A
• Current - Collector Pulsed (Icm):100 A
• Vce(on) (Max) @ Vge, Ic:3.2V @ 15V, 12A
• Power - Max:160 W
• Switching Energy:-

• Input Type:Standard
• Gate Charge:62 nC
• Td (on/off) @ 25°C:-
• Test Condition:-
• Reverse Recovery Time (trr):1.4 µs
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
• Supplier Device Package:TO-268