Technical Details

• Series:HEXFET®
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):20 V
• Current - Continuous Drain (Id) @ 25°C:2.6A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
• Rds On (Max) @ Id, Vgs:135mOhm @ 2.6A, 4.5V
• Vgs(th) (Max) @ Id:1.1V @ 10µA

• Gate Charge (Qg) (Max) @ Vgs:2.9 nC @ 4.5 V
• Vgs (Max):±12V
• Input Capacitance (Ciss) (Max) @ Vds:220 pF @ 16 V
• FET Feature:-
• Power Dissipation (Max):1.3W (Ta)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:Micro3™/SOT-23
• Package / Case:TO-236-3, SC-59, SOT-23-3