Technical Details

• Series:HEXFET®
• Package:Bulk
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):25 V
• Current - Continuous Drain (Id) @ 25°C:32A (Ta), 160A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Rds On (Max) @ Id, Vgs:1.3mOhm @ 33A, 10V
• Vgs(th) (Max) @ Id:2.1V @ 100µA

• Gate Charge (Qg) (Max) @ Vgs:39 nC @ 4.5 V
• Vgs (Max):±16V
• Input Capacitance (Ciss) (Max) @ Vds:4.16 pF @ 13 V
• FET Feature:Schottky Diode (Body)
• Power Dissipation (Max):2.1W (Ta), 54W (Tc)
• Operating Temperature:-40°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:DIRECTFET™ MX
• Package / Case:DirectFET™ Isometric MX