Technical Details

• Series:HEXFET®
• Package:Bulk
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):30 V
• Current - Continuous Drain (Id) @ 25°C:28A (Ta), 170A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Rds On (Max) @ Id, Vgs:2.2mOhm @ 28A, 10V
• Vgs(th) (Max) @ Id:2.35V @ 100µA

• Gate Charge (Qg) (Max) @ Vgs:54 nC @ 4.5 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:4.7 pF @ 15 V
• FET Feature:-
• Power Dissipation (Max):2.8W (Ta), 100W (Tc)
• Operating Temperature:-40°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:DIRECTFET™ MX
• Package / Case:DirectFET™ Isometric MX