- Part NumberG2R1000MT33J
- BrandGeneSiC Semiconductor
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionSIC MOSFET N-CH 4A TO263-7
- CategoryTransistors - FETs, MOSFETs - Single
In Stock: 1,130
Can ship immediately
Pricing:
- 1$16.58
Technical Details
- Series:G2R™
- Package:Tube
- Part Status:Active
- FET Type:N-Channel
- Technology:SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss):3300 V
- Current - Continuous Drain (Id) @ 25°C:4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):20V
- Rds On (Max) @ Id, Vgs:1.2Ohm @ 2A, 20V
- Vgs(th) (Max) @ Id:3.5V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs:21 nC @ 20 V
- Vgs (Max):+20V, -5V
- Input Capacitance (Ciss) (Max) @ Vds:238 pF @ 1000 V
- FET Feature:-
- Power Dissipation (Max):74W (Tc)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:TO-263-7
- Package / Case:TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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