Technical Details

• Series:HiPerFET™
• Package:Tube
• Part Status:Active
• FET Type:2 N-Channel (Dual)
• FET Feature:Standard
• Drain to Source Voltage (Vdss):100V
• Current - Continuous Drain (Id) @ 25°C:75A
• Rds On (Max) @ Id, Vgs:25mOhm @ 50A, 10V

• Vgs(th) (Max) @ Id:4V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs:180nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds:-
• Power - Max:-
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Through Hole
• Package / Case:i4-Pac™-5
• Supplier Device Package:ISOPLUS i4-PAC™