Technical Details

• Series:HiPerFET™
• Package:Tube
• Part Status:Active
• FET Type:2 N-Channel (Dual)
• FET Feature:Standard
• Drain to Source Voltage (Vdss):250V
• Current - Continuous Drain (Id) @ 25°C:30A
• Rds On (Max) @ Id, Vgs:50mOhm @ 25A, 10V

• Vgs(th) (Max) @ Id:4.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs:78nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds:4000pF @ 25V
• Power - Max:125W
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Through Hole
• Package / Case:i4-Pac™-5
• Supplier Device Package:ISOPLUS i4-PAC™