Technical Details

• Series:-
• Package:Tape & Box (TB)
• Part Status:Obsolete
• Transistor Type:NPN - Pre-Biased + Diode
• Current - Collector (Ic) (Max):100 mA
• Voltage - Collector Emitter Breakdown (Max):50 V
• Resistor - Base (R1):4.7 kOhms
• Resistor - Emitter Base (R2):4.7 kOhms

• DC Current Gain (hFE) (Min) @ Ic, Vce:20 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 10mA
• Current - Collector Cutoff (Max):500nA
• Frequency - Transition:250 MHz
• Power - Max:300 mW
• Mounting Type:Through Hole
• Package / Case:TO-226-3, TO-92-3 Short Body (Formed Leads)
• Supplier Device Package:TO-92S