Technical Details

• Series:-
• Package:Bulk
• Part Status:Active
• FET Type:2 N-Channel (Dual)
• FET Feature:Logic Level Gate
• Drain to Source Voltage (Vdss):30V
• Current - Continuous Drain (Id) @ 25°C:2.5A
• Rds On (Max) @ Id, Vgs:105mOhm @ 1.5A, 10V

• Vgs(th) (Max) @ Id:-
• Gate Charge (Qg) (Max) @ Vgs:5.2nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds:187pF @ 10V
• Power - Max:900mW
• Operating Temperature:150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:SOT-23-6 Thin, TSOT-23-6
• Supplier Device Package:6-CPH