Technical Details

• Series:-
• Package:Tray
• Part Status:Last Time Buy
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):40 V
• Current - Continuous Drain (Id) @ 25°C:6A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):-
• Rds On (Max) @ Id, Vgs:65mOhm @ 6A, 10V
• Vgs(th) (Max) @ Id:3V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:6.5 nC @ 4.5 V
• Vgs (Max):±25V
• Input Capacitance (Ciss) (Max) @ Vds:750 pF @ 25 V
• FET Feature:-
• Power Dissipation (Max):-
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:Die
• Package / Case:Die