Technical Details

• Series:-
• Package:Box
• Part Status:Obsolete
• Transistor Type:NPN
• Voltage - Collector Emitter Breakdown (Max):25V
• Frequency - Transition:650MHz
• Noise Figure (dB Typ @ f):-
• Gain:-

• Power - Max:350mW
• DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 4mA, 10V
• Current - Collector (Ic) (Max):-
• Operating Temperature:-65°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:Die
• Supplier Device Package:Die