Technical Details

• Series:C3M™
• Package:Tube
• Part Status:Active
• FET Type:N-Channel
• Technology:SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss):1000 V
• Current - Continuous Drain (Id) @ 25°C:22A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):15V
• Rds On (Max) @ Id, Vgs:155mOhm @ 15A, 15V
• Vgs(th) (Max) @ Id:3.5V @ 3mA

• Gate Charge (Qg) (Max) @ Vgs:21.5 nC @ 15 V
• Vgs (Max):±15V
• Input Capacitance (Ciss) (Max) @ Vds:350 pF @ 600 V
• FET Feature:-
• Power Dissipation (Max):83W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Through Hole
• Supplier Device Package:TO-247-4L
• Package / Case:TO-247-4