Technical Details

• Series:C3M™
• Package:Tube
• Part Status:Active
• FET Type:N-Channel
• Technology:SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss):1000 V
• Current - Continuous Drain (Id) @ 25°C:35A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):15V
• Rds On (Max) @ Id, Vgs:78mOhm @ 20A, 15V
• Vgs(th) (Max) @ Id:3.5V @ 5mA

• Gate Charge (Qg) (Max) @ Vgs:35 nC @ 15 V
• Vgs (Max):+19V, -8V
• Input Capacitance (Ciss) (Max) @ Vds:660 pF @ 600 V
• FET Feature:-
• Power Dissipation (Max):113.5W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Through Hole
• Supplier Device Package:TO-247-4L
• Package / Case:TO-247-4