Technical Details

• Series:C3M™
• Package:Tube
• Part Status:Active
• FET Type:N-Channel
• Technology:SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss):1200 V
• Current - Continuous Drain (Id) @ 25°C:100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):15V
• Rds On (Max) @ Id, Vgs:28.8mOhm @ 50A, 15V
• Vgs(th) (Max) @ Id:3.6V @ 17.7mA

• Gate Charge (Qg) (Max) @ Vgs:162 nC @ 15 V
• Vgs (Max):+15V, -4V
• Input Capacitance (Ciss) (Max) @ Vds:4818 pF @ 1000 V
• FET Feature:-
• Power Dissipation (Max):469W (Tc)
• Operating Temperature:-40°C ~ 175°C (TJ)
• Mounting Type:Through Hole
• Supplier Device Package:TO-247-4L
• Package / Case:TO-247-4