Technical Details

• Series:C3M™
• Package:Tube
• Part Status:Active
• FET Type:N-Channel
• Technology:SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss):650 V
• Current - Continuous Drain (Id) @ 25°C:120A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):15V
• Rds On (Max) @ Id, Vgs:21mOhm @ 55.8A, 15V
• Vgs(th) (Max) @ Id:3.6V @ 15.5mA

• Gate Charge (Qg) (Max) @ Vgs:188 nC @ 15 V
• Vgs (Max):+15V, -4V
• Input Capacitance (Ciss) (Max) @ Vds:5011 pF @ 400 V
• FET Feature:-
• Power Dissipation (Max):416W (Tc)
• Operating Temperature:-40°C ~ 175°C (TJ)
• Mounting Type:Through Hole
• Supplier Device Package:TO-247-4L
• Package / Case:TO-247-4