Technical Details

• Series:-
• Package:Tape & Box (TB)
• Part Status:Obsolete
• Transistor Type:NPN
• Voltage - Collector Emitter Breakdown (Max):25V
• Frequency - Transition:1.1GHz
• Noise Figure (dB Typ @ f):-
• Gain:-

• Power - Max:350mW
• DC Current Gain (hFE) (Min) @ Ic, Vce:38 @ 7mA, 10V
• Current - Collector (Ic) (Max):50mA
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Through Hole
• Package / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
• Supplier Device Package:TO-92-3