Technical Details

• Series:-
• Package:Bulk
• Part Status:Active
• FET Type:2 N-Channel (Dual), Schottky
• FET Feature:Silicon Carbide (SiC)
• Drain to Source Voltage (Vdss):1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C:370A (Tc)
• Rds On (Max) @ Id, Vgs:10mOhm @ 200A, 20V

• Vgs(th) (Max) @ Id:3V @ 10mA
• Gate Charge (Qg) (Max) @ Vgs:1360nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds:-
• Power - Max:2300W
• Operating Temperature:-40°C ~ 175°C (TJ)
• Mounting Type:Chassis Mount
• Package / Case:SP6
• Supplier Device Package:SP6