Technical Details

• Series:-
• Package:Bulk
• Part Status:Active
• FET Type:2 N-Channel (Half Bridge)
• FET Feature:Silicon Carbide (SiC)
• Drain to Source Voltage (Vdss):1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C:113A (Tc)
• Rds On (Max) @ Id, Vgs:25mOhm @ 80A, 20V

• Vgs(th) (Max) @ Id:2.2V @ 4mA (Typ)
• Gate Charge (Qg) (Max) @ Vgs:197nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds:3800pF @ 1000V
• Power - Max:500W
• Operating Temperature:-40°C ~ 150°C (TJ)
• Mounting Type:Chassis Mount
• Package / Case:SP3
• Supplier Device Package:SP3