Technical Details

• Series:POWER MOS 8™
• Package:Bulk
• Part Status:Obsolete
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):1000 V
• Current - Continuous Drain (Id) @ 25°C:40A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:216mOhm @ 33A, 10V
• Vgs(th) (Max) @ Id:5V @ 2.5mA

• Gate Charge (Qg) (Max) @ Vgs:570 nC @ 10 V
• Vgs (Max):±30V
• Input Capacitance (Ciss) (Max) @ Vds:14800 pF @ 25 V
• FET Feature:-
• Power Dissipation (Max):657W (Tc)
• Operating Temperature:-40°C ~ 150°C (TJ)
• Mounting Type:Chassis Mount
• Supplier Device Package:SP1
• Package / Case:SP1