Technical Details

• Series:-
• Package:Bulk
• Part Status:Obsolete
• FET Type:2 N-Channel (Half Bridge)
• FET Feature:Silicon Carbide (SiC)
• Drain to Source Voltage (Vdss):1000V (1kV)
• Current - Continuous Drain (Id) @ 25°C:36A
• Rds On (Max) @ Id, Vgs:270mOhm @ 18A, 10V

• Vgs(th) (Max) @ Id:5V @ 5mA
• Gate Charge (Qg) (Max) @ Vgs:308nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds:8700pF @ 25V
• Power - Max:694W
• Operating Temperature:-40°C ~ 150°C (TJ)
• Mounting Type:Chassis Mount
• Package / Case:SP4
• Supplier Device Package:SP4