Technical Details

• Series:CoolMOS™
• Package:Tray
• Part Status:Obsolete
• FET Type:4 N-Channel (H-Bridge)
• FET Feature:Super Junction
• Drain to Source Voltage (Vdss):900V
• Current - Continuous Drain (Id) @ 25°C:30A
• Rds On (Max) @ Id, Vgs:120mOhm @ 26A, 10V

• Vgs(th) (Max) @ Id:3.5V @ 3mA
• Gate Charge (Qg) (Max) @ Vgs:270nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds:6800pF @ 100V
• Power - Max:250W
• Operating Temperature:-40°C ~ 150°C (TJ)
• Mounting Type:Chassis Mount
• Package / Case:SP2
• Supplier Device Package:SP2