Technical Details

• Series:-
• Package:Box
• Part Status:Obsolete
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):50 V
• Current - Continuous Drain (Id) @ 25°C:100mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On):-
• Rds On (Max) @ Id, Vgs:20Ohm @ 10mA, 10V
• Vgs(th) (Max) @ Id:-

• Gate Charge (Qg) (Max) @ Vgs:-
• Vgs (Max):-
• Input Capacitance (Ciss) (Max) @ Vds:15 pF @ 10 V
• FET Feature:-
• Power Dissipation (Max):200mW (Ta)
• Operating Temperature:125°C (TJ)
• Mounting Type:Through Hole
• Supplier Device Package:3-SPA
• Package / Case:3-SIP