Technical Details

• Series:-
• Package:Tray
• Part Status:Obsolete
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):650 V
• Current - Continuous Drain (Id) @ 25°C:15A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:720mOhm @ 6A, 10V
• Vgs(th) (Max) @ Id:-

• Gate Charge (Qg) (Max) @ Vgs:45.4 nC @ 10 V
• Vgs (Max):±30V
• Input Capacitance (Ciss) (Max) @ Vds:1200 pF @ 30 V
• FET Feature:-
• Power Dissipation (Max):2.5W (Ta), 170W (Tc)
• Operating Temperature:150°C (TJ)
• Mounting Type:Through Hole
• Supplier Device Package:TO-3PB
• Package / Case:TO-3P-3, SC-65-3