Technical Details

• Series:-
• Package:Bulk
• Part Status:Obsolete
• FET Type:-
• Technology:SiC (Silicon Carbide Junction Transistor)
• Drain to Source Voltage (Vdss):650 V
• Current - Continuous Drain (Id) @ 25°C:4A (Tc) (165°C)
• Drive Voltage (Max Rds On, Min Rds On):-
• Rds On (Max) @ Id, Vgs:415mOhm @ 4A
• Vgs(th) (Max) @ Id:-

• Gate Charge (Qg) (Max) @ Vgs:-
• Vgs (Max):-
• Input Capacitance (Ciss) (Max) @ Vds:324 pF @ 35 V
• FET Feature:-
• Power Dissipation (Max):47W (Tc)
• Operating Temperature:-55°C ~ 225°C (TJ)
• Mounting Type:Through Hole
• Supplier Device Package:TO-257
• Package / Case:TO-257-3