Technical Details

• Series:-
• Package:Bulk
• Part Status:Obsolete
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):100 V
• Current - Continuous Drain (Id) @ 25°C:1.69A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):5V
• Rds On (Max) @ Id, Vgs:2.6Ohm @ 1.07A, 5V
• Vgs(th) (Max) @ Id:2V @ 1mA

• Gate Charge (Qg) (Max) @ Vgs:1 nC @ 5 V
• Vgs (Max):±10V
• Input Capacitance (Ciss) (Max) @ Vds:-
• FET Feature:-
• Power Dissipation (Max):8.33W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Through Hole
• Supplier Device Package:TO-39
• Package / Case:TO-205AF Metal Can