Technical Details

• Series:-
• Package:Bulk
• Part Status:Active
• FET Type:N-Channel
• Voltage - Breakdown (V(BR)GSS):40 V
• Drain to Source Voltage (Vdss):40 V
• Current - Drain (Idss) @ Vds (Vgs=0):8 mA @ 15 V
• Current Drain (Id) - Max:-

• Voltage - Cutoff (VGS off) @ Id:-
• Input Capacitance (Ciss) (Max) @ Vds:18pF @ 10V (VGS)
• Resistance - RDS(On):60 Ohms
• Power - Max:360 mW
• Operating Temperature:-65°C ~ 200°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:3-SMD, No Lead
• Supplier Device Package:3-UB (3.09x2.45)